RAM Modules

Compliant with JEDEC international standards, Transcend's new-gen DDR5 JetRam memory modules are manufactured with true ETT grade, brand-name DRAM chips that have passed Transcend's strict screening process and rigorous environmental testing. DDR5 features two independent 32-bit channels that bring speeds to 5,600 MT/s. 1.1V low working voltage and PMIC effectively reduce signal interruption while cutting down power consumption for your computer. On-die ECC automatically spots and corrects data errors, enhancing data integrity and system stability.

Memory Modules | DDR5

New-gen DDR5 memory modules feature two transfer channels for blazing-fast speeds. 1.1V low voltage, PMIC, and on-die ECC bring unprecedented performance and stability to your computer.

Ultra Fast!

DDR5 DRAM modules offer advanced system performance and reliability. High throughput improves your computer's performance in a snap!

Dual Transfer Channels

DDR5 adopts two independent 32-bit transfer channels, which provide higher transfer speeds and increase storage efficiency. The optimized performance is ready to support professional works including graphic design, programming, and video editing.

Optimized Power Efficiency

DDR5 working voltage is merely at 1.1V and it is designed with a power management IC (PMIC), which allows better energy control and reduces power interference. Transcend's JetRam memory modules are manufactured with true ETT grade, brand-name DRAM chips that have passed Transcend's strict screening process and rigorous environmental testing.

The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 184-pin printed circuit board. The TS128MLD64V3J is a Dual In-Line Memory Module and is intended for mounting into 184-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The TS128MLD72V4J is a 128Mx72bits Double Data Rate SDRAM high density for DDR400. The TS128MLD72V4J consists of 18pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a 2048 bits serial EEPROM on a 184-pin printed circuit board. The TS128MLD72V4J is a Dual In-Line Memory Module and is intended for mounting into 184-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The TS128MLK64V1U is a 128M x 64bits DDR3-1066 unbuffered DIMM. The TS128MLK64V1U consists of 8pcs 128Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit board. The TS128MLK64V1U is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.